sales@ampligan.com
Ampligan is a manufacturer of a GaAs, GaN, Si microwave chips. We provide best serive for MMIC Design and Fabrication.
Welcome to Ampligan, where innovation meets efficiency in the realm of electronics. As a young and dynamic company, we are dedicated to pushing the boundaries of electronics development and production.
Our mission is to create cutting-edge technology that powers the future, and we’re doing it with a zest that only comes from a team passionate about what they do.
Our key products
- Broadband low noise amplifiers
- Low Phase Noise, Low Noise Amplifier
- Gallium Arsenide Power Amplifier
- GaN power amplifier
- Broadband MIXER
- Wideband limiter
- High Power FET Switch
- low cost device
- Gallium arsenide multi-function chip
- Silicon based products
- SIP surface mount multi-function device
- Surface mount power amplifier
- Internally matched amplifier
- Ceramic filter
- Low-cost, high-reliability ceramic-metal sealing device
Our capabilities of GaAs/GaN/Si microwave chips
- GaAs/GaN/Si microwave chip
- Comprehensive range, more than 20 categories and more than 500 models
- Domestic substitution, more than 900 models, performance substitution, price 5-60% less than Marki’s Mixer, Hittite’s LNA, VCO, MACOM’s PIN switch, etc.
- Broadband chip with superior performance
- Broadband amplifiers, VCOs, mixers, switching filter banks, etc.
- TR multi-function chip set (S/C/X/Ku/Ka, GaAs/GaN transceiver + GaAs/Si amplitude and phase)
- Customized multi-function chip
- Transceiver/amplitude-phase multi-function, bidirectional amplifier, switching filter bank, mixing multi-function, power dividing network, etc.
- Packaging devices (plastic packaging, low-cost ceramic and gold packaging, SIP)
Featured GaN MMIC Power amplifier
LNPA2735-50-130
50-130W, 2.7 — 3.5GHz, GaN MMIC, Power Amplifier
LNPA2731-50-130 is a gallium nitride high electronmobility transistor (GaN HEMT). It is a high-power internally matched power transistor that can operate inpulse mode at saturated power and is used in standard communication and radar frequency bands. Provides optimal power and gain performance in 50Ω systems.
Features:
• Coverable working frequency band range: 2.7~3.5GHz;
• Good 50Ω impedance matching, easy to use in cascade;
• Metal ceramic shell sealed package;
• Available in screw-on flange package or welded pill package;
Limit parameters:
• Source-drain voltage Vds: +120V;
• Gate-source voltage Vgs: -10V;
• Dissipated power (Tc=25℃): 110W;
• Storage temperature: -55℃~+125℃;
• Operating temperature: -40℃~+75℃;
LNPA2530-150
150W, 2.5 — 3.0GHz, GaN MMIC, Power Amplifier.
LNPA2530-150 is a gallium nitride high electronmobility transistor (GaN HEMT). It is a high-power internally matched power transistor that can operate inpulse mode at saturated power and is used in standard communication and radar frequency bands. Provides optimal power and gain performance in 50Ω systems.
Features:
•Coverable working frequency band range: 2.55~3.0GHz;
• Good 50Ω impedance matching, easy to use in cascade;
• Metal ceramic shell sealed package;
• Available in screw-on flange package or welded pill package;
Limit parameters:
• Source-drain voltage Vds: +100V;
• Gate-source voltage Vgs: -10V;
• Dissipated power (Tc=25℃): 89W;
• Storage temperature: -55℃~+125℃;
• Operating temperature: -40℃~+75℃;
LNPA2731-150-260
150-260W, 2.7 — 2.9 GHz, GaN MMIC, Power Amplifier
LNPA2731-150-260 is a gallium nitride high electronmobility transistor (GaN HEMT). It is a high-power internally matched power transistor that can operate inpulse mode at saturated power and is used in standard communication and radar frequency bands. Provides optimal power and gain performance in 50Ω systems.
Features:
• Coverable working frequency band range: 2.7~2.9GHz;
• Good 50Ω impedance matching, easy to use in cascade;
• Metal ceramic shell sealed package;
• Available in screw-on flange package or welded pill package;
Limit parameters:
• Source-drain voltage Vds: +120V;
• Gate-source voltage Vgs: -10V;
• Dissipated power (Tc=25℃): 94W;
• Storage temperature: -55℃~+125℃;
• Operating temperature: -40℃~+75℃;
LNPA2731-350
350W, 2.7 — 3.1 GHz, GaN MMIC, Power Amplifier
LNPA2731-350 is a gallium nitride high electronmobility transistor (GaN HEMT). It is a high-power internally matched power transistor that can operate inpulse mode at saturated power and is used in standard communication and radar frequency bands. Provides optimal power and gain performance in 50Ω systems.
Features:
• Coverable working frequency band range: 2.7~3.1GHz;
• Good 50Ω impedance matching, easy to use in cascade;
• Metal ceramic shell sealed package;
• Available in screw-on flange package or welded pill package;
Limit parameters:
• Source-drain voltage Vds: +120V;
• Gate-source voltage Vgs: -10V;
• Dissipated power (Tc=25℃): 239W;
• Storage temperature: -55℃~+125℃;
• Operating temperature: -40℃~+75℃;
News
Company news
- Our facilities
Factory facilities and production test equipment A self-owned independent factory of 6,000 square meters, including 2,200 square meters of workshops, including 1,200 square meters of class 1,000/class 10,000 clean workshops.… Читать далее: Our facilities - Gan transistors main applications.
Gallium nitride is a semiconductor material from which most types of modern LEDs are made. Products made from it are also used in mobile communication base stations. But recently, a… Читать далее: Gan transistors main applications. - The site started working after the update!We are glad to see you on our website.
Other news
Contact us
We are always open to any questions and suggestions about our products. Please feel free to contact us.
Mail us: sales@ampligan.com
